page:p -p1 plastic-encapsulate mosfets mako semiconductor co.,limited features high dense cell design for extremely low r ds(on) rugged and reliable case material: molded plastic. parameter symbol ratings units drain-source voltage vds -20 v gate-source voltage vgs 8 v drain current (continuous) id -2.8- a drain current (pulsed) 1 idm -10 a total power dissipation @ta=25oc pd 1.25 w operating junction and storage temperature range t j, t stg -55 to +150 c thermal resistance junction to ambient (pcb mounted) 2 r ja 100 c/w electrical characteristics (ta=25c, unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250a -20 v zero gate voltage drain current i dss v ds = -20v, v gs = 0v -1 a gate body leakage current, forward i gssf v gs = 8v, v ds = 0v 100 na gate body leakage current, reverse i gssr v gs = -8v, v ds = 0v -100 na on characteristics c gate threshold voltage v gs(th) v gs = v ds , i d = -250a -0.45 v static drain-source on-resistance r ds(on) v gs = -4.5v, i d = -2.8a 80 120 m ? v gs = -2.5v, i d = -2.0a 110 150 m ? forward transconductance g fs v ds = -5v, i d = -2.8a 8 s dynamic characteristics d input capacitance c iss v ds = -6v, v gs = 0v, f = 1.0 mhz 880 pf output capacitance c oss 270 pf reverse transfer capacitance c rss 175 pf switching characteristics d turn-on delay time t d(on) v dd = -6v, i d = -1a, v gs = -4.5v, r gen = 6 ? 11 20 ns turn-on rise time t r 5 10 ns turn-off delay time t d(off) 32 65 ns turn-off fall time t f 23 45 ns p-channel mosfet sot-23 1.gate 2.source 3.drain s g d SI2301 absolute maximum ratings (ta=25 o c, unless otherwise noted) m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
total gate charge q g v ds = -6v, i d = -2.8a, v gs = -4.5v 11 14.5 nc gate-source charge q gs 1.5 nc gate-drain charge q gd 2.1 nc drain-source diode characteristics and maximun ratings drain-source diode forward current 3 i s -0.75 a drain-source diode forward voltage 4 v sd v gs = 0v, i s = -0.75a -1.2 v 1.repetitive rating : pulse width limited by maximum junction temperatu. 2.surface mounted on fr4 board,t<5 sec. 3.pulse test : pulse width < 300s, duty cycle < 2%. 4.guaranteed by design, not subject to production testing. plastic-encapsulate mosfets -i d , drain current (a) -i d , drain current (a) -v ds , drain-to-source voltage (v) figure 1. output characteristics -v gs , gate-to-source voltage (v) figure 2. transfer characteristics 10 8 6 4 2 0 01 45 32 -v gs =2.5v -v gs =2.0v -v gs =1.5v -v gs =4.5,4,3,v 10 8 6 4 2 0 0.0 1.0 2.0 3.0 0.5 1.5 t j =125 c -55 c 2.5 25 c c, capacitance (pf) c iss c oss c rss 1200 1000 800 600 400 200 0 02 4 6 8 10 r ds(on), normalized r ds(on) , on-resistance(ohms) -v ds , drain-to-source voltage (v) figure 3. capacitance t j , junction temperature( c) figure 4. on-resistance variation with temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 v gs =-4.5v i d =-2.8a -100 -50 0 50 100 150 200 page:p -p2 mako semiconductor co.,limited typical characteristics SI2301 m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
page:p -p plastic-encapsulate mosfets mako semiconductor co.,limited v th , normalized gate-source threshold voltage t j , junction temperature( c) figure 5. gate threshold variation with temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 v ds =v gs i d =-250 a -50 -25 0 25 50 75 100 125 150 -i s , source-drain current (a) -v sd , body diode forward voltage (v) figure 6. body diode forward voltage variation with source current 10 0 10 1 0.2 0.4 0.6 0.8 10 -1 1.2 1.0 v gs =0v -v gs , gate to source voltage (v) qg, total gate charge (nc) figure 7. gate charge -v ds , drain-source voltage (v) figure 8. maximum safe operating area -i d , drain current (a) 10 1 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 2 10 2 5 4 3 2 1 0 0 369 1 2 v ds =-6v i d =-2.8a 1s 100ms 10ms dc 1ms r ds(on) limit single pulse t a =25 c t j =150 c typical characteristics SI2301 m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
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